Published on : Sep 12, 2017
A group of Researchers from the National University of Singapore (NUS) have demonstrated new discoveries on the properties of 2D molybdenum disulfide (MoS2), a broadly considered semiconductor without bounds.
In separate investigations led by Professor Andrew Wee along with Professor Andrivo Rusydi (Assistant) from the Department of Physics at the NUS Faculty of Science, the analysts found that the part of oxygen in MoS2, and a novel strategy to make different tunable, transformed optical band holes in the substance. This novel intuition grows the comprehension of the inborn properties of MoS2 which could possibly upset its applications in the semiconductor segment. The research was recognized in the Physical Review Letters and Nature Communications separately.
MoS2 is essentially a material identical to a semiconductor that presentations satisfying optical and electronic properties for the advancement and change of transistors, photodetectors and sun powered cells. With a molecularly thin two-dimensional structure and the nearness of a 1.8eV vitality band hole, MoS2 is a semiconductor that can offer more extensive applications than graphene which does not have a band hole.
The group studied that MoS2 showed a higher dielectric work when presented to oxygen. This new learning shed light on how the adsorption and desorption properties of oxygen by MoS2 can be utilized to change its electronic and optical properties to suit distinctive applications. The study additionally features the requirement for sufficient thought of outward factors that may influence the properties of the material in future research. The exploration discoveries from the two investigations loan bits of knowledge to different materials that have comparable structure with MoS2.